BD139 is a three-layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB. A change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.
Features:-
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
- Easy to carry and handle
Detailed Specifications:-
Transistor Polarity | NPN |
Collector−Emitter Voltage (VCEO) | 80V |
Collector−Base Voltage (VCBO) | 80V |
Continuous Collector Current (Ic) | 1.5A |
Continuous Base Current (Ib) | 0.5A |
DC Current Gain (hFE) | 40-250 |
Operating Temperature Range | -65 – 150°C |
Power Dissipation (Pd) | 12.5W |
Thermal Resistance (ΘJA) | 100°C/W |
Thermal Resistance (ΘJC) | 10°C/W |
Package includes BD139 NPN Transistor:
1 x BD139 NPN Medium Power Transistor
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